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Functional Materials Technology Group
Optical Nanocharacterization Group
Inverse Materials Design Group
Next-Generation Energy Systems Group
Biophotonic Applications Group
Solar Energy Conversion Group
Oxide Single Crystals Group
A3B5 Compound Semiconductors Group
Functional Materials Laboratory
Oxide Single Crystals Laboratory
Materials Characterization Laboratory
III-V Compound Semiconductors Laboratory
Contact
Ensemble3 sp. z o.o.
01-919 Warsaw
133 Wólczyńska St.
NIP 1182211096
KRS 0000858669
Characterization
The scanning electrochemical microscope (SECM) could examine electrochemistry at high resolution near interfaces. By detecting
The aim of the prototype of the Super Resolution Broadband Ultrafast Microscopy technique is to
Photoelectric Spectrometer serves as a scientific tool to automatically characterize the photoelectric properties of samples
Our special s-SNOM, equipment worth >1M EUR enables near-field imaging and nanospectroscopy in transmission and
Our Surface Plasmon Resonance (SPR) Spectrometer enables us to perform highly-sensitive, non-label analysis for the
The LabRAM HR Evolution system is ideally suited to both micro and macro measurements (Raman and photoluminescence),
The LABRAM microscope is fully integrated with an AIST-NT SmartSPM Scanning Probe Microscope which offers
The microspectrophotometer enables acquisition of spectra with extremely small sample areas non-destructively. Measurements can be
This is a FTIR microspectrophotometer for spectroscopy (transmission and reflection mode) measurements at near/middle/far infrared
The high sensitivity of the used detector and high spectral resolution (0.05nm) enables measurements of low
This microscope can analyze a multitude of parameters down to the single molecule level using methods
These measurements employ an in-house built photoluminescence system with double grating monochromator HR 460 and
Complex photoelectrochemical characterization can be performed with the CHI-660D electrochemical workstation by CH Instruments using
This is universal device for optical measurements in the spectral range from 400 to 2000
X-ray universal powder Diffractometer Rigaku SmartLab 3kW with a vertical goniometer and Cu monochromated radiation. The diffractometer
The Carl Zeiss AURIGA workstation is a sophisticated multi-functional platform based on a high-performance field
X-ray photoelectron spectroscopy (XPS) is a surface sensitive analytical technique. A sample is irradiated with
SIMS is a very precise surface sensitive analytical technique. A sample is bombarded with a
The UVISEL 2 spectroscopic ellipsometer, manufactured by HORIBA (Jobin Yvon), covers a wide spectral range from
The AFM is a type of scanning probe microscopy (SPM) which allows producing microscopic maps
The ring/plate method of measuring the surface and interfacial tension of liquids is an established method
Matrix of the camera is made of InSb. detection range: 1.1-5.3 µm, matrix size: 640 x
The HMS-5500 Hall Effect Measurement Systems plot concentration versus temperature, mobility versus temperature, resistivity versus temperature,
This spectrometer works in spectral range from 25000 cm-1 to 10 cm-1 with resolution up
This equipment is fully integrated with a motorized XY stage which performs a surface profile
The micro-pulling down system is of very high quality, and was built by Cyberstar (France) – a well-known company producing
The four Mirror Furnace is a floating-zone (crucible-free) furnace for melting of extremely high temperature materials (up to 3000°C). The
Recently, in IMIF, a furnace with a resistive heater has been especially designed for fabrication of single crystals with low
This is an apparatus designed and manufactured in IMIF for manufacturing thin layers of eutectic composites. The novel method is
The short vertical furnace was made in ITME to obtain high Q-factor Whispering Gallery Mode microresonators in the form of
The Czochralski pullers for oxide single crystal growth with melting temperatures up to 2100°C, made by Cyberstar are located at
The silicon carbide crystal growth equipment at DFM-ITME, comprises 3 furnaces for silicon carbide crystal growth by the PVT method.
These are Mark IV pullers for crystallization of AIIIBV group semiconducting compounds such as phosphides, antimonides or arsenides (i.e. GaP,
A system for the application of polycrystalline and amorphous layers by the sputtering method. It has the possibility of deposition directly from targets (possibility
The device provides the facilities to sputtering monolayer and multilayer coatings which can be used as electrical or thermal contacts, insulating