Functional Materials Technology Group
Optical Nanocharacterization Group
Inverse Materials Design Group
Next-Generation Energy Systems Group
Biophotonic Applications Group
Solar Energy Conversion Group
Oxide Single Crystals Group
A3B5 Compound Semiconductors Group
Functional Materials Laboratory
Oxide Single Crystals Laboratory
Materials Characterization Laboratory
III-V Compound Semiconductors Laboratory
Ensemble3 sp. z o.o.
133 Wólczyńska St.
The silicon carbide crystal growth equipment at DFM-ITME, comprises 3 furnaces for silicon carbide crystal growth by the PVT method. The furnaces are designed for growing bulk semiconducting 4H- and 6H-SiC single crystals. The system design allows the growth of crystals up to 4” diameter. The furnaces have two independent resistance heaters which allow for the change of the temperature field during the crystallization process. The furnaces are available with a maximum operating temperature of 2500°C. PVT furnaces are equipped with the ability to supply streams of supplied process gas such as argon and nitrogen. When materials with SiC are required, this equipment will be used.