The silicon carbide crystal growth equipment at DFM-ITME, comprises 3 furnaces for silicon carbide crystal growth by the PVT method. The furnaces are designed for growing bulk semiconducting 4H- and 6H-SiC single crystals. The system design allows the growth of crystals up to 4” diameter. The furnaces have two independent resistance heaters which allow for the change of the temperature field during the crystallization process. The furnaces are available with a maximum operating temperature of 2500°C. PVT furnaces are equipped with the ability to supply streams of supplied process gas such as argon and nitrogen. When materials with SiC are required, this equipment will be used.

physical-vapour-transport-pvt-growth-system