I agree my information will be processed in accordance with the ENSEMBLE³ Privacy Policy.

Sign up for our newsletter

 I Privacy policy |

Organizational Structure

International Scientific Committee (ISC)  

Strategic Partners

Vision

Research Groups

Senior Researchers

Functional Materials Technology Group
Optical Nanocharacterization Group
Inverse Materials Design Group
Next-Generation Energy Systems Group
Biophotonic Applications Group
Solar Energy Conversion Group
Oxide Single Crystals Group

A3B5 Compound Semiconductors Group

Laboratories

Functional Materials Laboratory

Oxide Single Crystals Laboratory

Materials Characterization Laboratory

III-V Compound Semiconductors Laboratory

Projects

Publications

Facilities

Contact

Ensemble3 sp. z o.o.

01-919  Warsaw
133 Wólczyńska St.

NIP 1182211096

KRS 0000858669 

contact@ensemble3.eu

Thermoelectric materials

• Bismuth Telluride (Bi₂Te₃), Bismuth Selenide (Bi₂Se₃), Bismuth Telluride Selenide (BTS), Bismuth Antimony Telluride (BST), doped or undoped

Applications      

•  Automotive industry – heat energy recoveryin internal combustion engines
• Radioisotope generators –- space industry
  of electricity in space probes
• Combined solar and thermogenerator systems, use of a wider –- green energy range of radiation frequencies

Silicon Carbide (SiC)

Gallium Antimonide (GaSb)

• Grown by modified Czochralski method
• Diameter 2" or 3”
• Orientation <100> or <111>
• Available types and their parameters
  - undoped
  p-type [p < 2 x 10¹⁷ cm^-3; µ > 600 cm² / Vs]
  - doped with Silicone (Si)
  p-type [p = 4 x 10¹⁷ to 1 x 10¹⁹ cm^-3; µ > 250 cm² / Vs]
  - doped with Zinc (Zn)
  p-type [p = 2 x 10¹⁸ to 1 x 10¹⁹ cm^-3; µ > 250 cm² / Vs]
  - doped with Tellurium (Te)
  n-type [n = 1 x 10¹⁷ to 1 x 10¹⁸ cm^-3; µ > 2500 cm² / Vs]

Applications    

• Gallium Antimonide is a crystal grown
  gallium source used to produce sputtering
  targets and deposition sources and as a
  substrate material for various semiconductor
  and photo-optic materials.
• Thermally treated Gallium Antimonide
  can be used as a surface-field THz emitter
  with an efficiency comparable to Gallium Arsenide.
• Gallium Antimonide applications
  - infrared detectors
  - infrared LEDs
  - lasers
  - transistors
  - THz applications

Indium Phosphide (InP)

Active materials for lasers

​​​​​​​

• Active material example: Ytterbium-doped Calcium Aluminum Gadolinium Oxide (Yb: CaGdAlO₄, Yb: CALGO).
• Yb: CALGO application: widely used in laser processing applications, e. g. femtosecond thin-disk oscillator in a femtosecond laser.
• Yb: CALGO: highly effective laser medium for high power ultrafast lasers.
• Dopant level can be controlled to optimize pumping requirements.

Scintillating materials

• Scintillators – materials that exhibits scintillation, the property
  of luminescence, when excited by ionizing radiation.
• Scintillator example – Lutetium Aluminum Perovskite (LuAlO₃ , LuAP) doped with Cerium (Ce).
• Ioninizing radiation sensors in the Positron Emission Tomography (PET).

Materials for optoelectronics

Gallium Phosphide (GaP)

• Grown by LEC
• Diameter 2" or 3”
• Orientation <100> or <111> or <110>
• Available types and their parameters
  - undoped SI [r > 10⁷ W cm]
  - undoped n-type [n < 2 x 10¹⁶ cm^-3; µ > 150 cm² / Vs]
  - doped with Sulfur (S)
  n-type [n = 2 x 10¹⁷ to 5 x 10¹⁸ cm^-3; µ > 90 cm² / Vs]
  - doped with Zinc (Zn)
  p-type [p = 5 x 10¹⁷ to 5 x 10¹⁸ cm^-3]
  - doped with Cadmium (Cd)
  p-type [p = 2 x 10¹⁶ to 3 x 10¹⁷ cm^-3]
  - doped with Chromium (Cr) SI [r > 10⁷ W cm]

Applications      

• Gallium Phosphide is used in manufacturing
  low-cost red, orange, and green light-emitting
  diodes (LEDs) with low to medium brightness.
• Gallium Phosphide can be used in the optical switches. Optical switch is a key component in the nowadays optical network.
• Gallium Phosphide applications:
  - low-cost LEDs, red, orange, and green
  light-emitting diodes
  - THz applications, emitters and detectors
  - optical switches

Indium Arsenide (InAs)

• Grown by LEC
• Diameter 2" or 3”
• Orientation <100> or <111>
• Available types and their parameters
  - undoped
  n-type [n < 2 x 10¹⁶ cm^-3; µ > 2 x 10⁴ cm² / Vs]
  - doped with Sulfur (S)
  n-type [n = 1 x 10¹⁷ to 5 x 10¹⁹ cm^-3; µ > 3 x 10³ cm² / Vs]
  - doped with Zinc (Zn)
  p-type [p = 1 x 10¹⁷ to 5 x 10¹⁹ cm^-3; µ > 80 cm² / Vs]

Applications      

• Indium Arsenide is a direct bandgap material used for construction of infrared detectors,
  for the wavelength range of 1–3.8 µm.
• The detectors are usually photovoltaic photodiodes.
• Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well.
• Indium Arsenide applications:
  • infrared detectors, photovoltaic photodiodes, cryogenically cooled, high-power
  • diode lasers
  • THz radiation source and quantum dots
  • Faraday Rotators

Gallium Arsenide (GaAs)

Nonlinear Optical (NLO) Materials

• NLO materials – allow us to change color of a light beam, its shape
  in space and time, and to create the shortest events made by humans.
• NLO materials example – Magnesium Aluminate Spinel doped with Cobalt (MgAl₂O₄: Co, MALO), Yttrium Aluminium Garnet doped with Vanadium (YAG: V3+), Chromium (YAG: Cr4+) or Cobalt (YAG: Co2+).
• MALO, a non-linear absorber, used in microlasers with 10 kW impulse and rangefinder cameras up to several kilometers range.

Optical isolators

We produce and develop variety of materials:

• AIIIBV single crystals: GaAs, InAs, GaP, InP, GaSb
• Other materials: SiC, Bi₂Te₃, Bi₂Se₃, BTS, BST
• Oxides: Y₃Al₅O₁₂, Lu₃Al₅O₁₂, LuAP, Gd₃Al₂Ga₃O₁₂, YAlO₃, GdCa₄O(BO₃)₃, YVO₄, Yb: CALGO, TSAG, MALO, YAG: V3+, YAG: Cr4+, YAG: Co2+

We sell in different forms and shapes tailored to your needs:

• polished epi-ready wafers
• wafers diced into smaller parts
• pieces of other shapes: i. e. oriented seeds
• cubes and targets
• polycrystalline boules

We share our knowledge with academic users

• know-how on the synthesis crystal growth and Chemico-Mechanical Processing (CMP) of our materials.