Oxides

Bismuth Telluride (Bi₂Te₃), Bismuth Selenide (Bi₂Se₃), Bismuth Telluride Selenide (BTS), Bismuth Antimony Telluride (BST), doped or undoped

Applications

Automotive industry – heat energy recoveryin internal combustion engines
Radioisotope generators –- space industry
of electricity in space probes
Combined solar and thermogenerator systems, use of a wider –- green energy range of radiation frequencies

Silicon Carbide (SiC)

Silicon Carbide is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.
Gallium Nitride (GaN) – direct competitor, higher operating frequency, worse heat conduction, lower availability, so SiC is better for high-power energetics.

Applications

Consumer electronics:
- Personal Computer Power Supplies
- Uninterruptible Power Supply (UPS)
Hybrid / Electric Vehicles
Industry
- AC / DC & DC / AC switch
- Transmission of electricity
- Rail vehicles
- Renewable energy sources
- Electric motor (inverter)

Gallium Antimonide (GaSb)

Grown by modified Czochralski method
Diameter 2"
Orientation <100> or <111>
Available types and their parameters
- undoped
p-type
- doped with Silicone (Si)
p-type
- doped with Zinc (Zn)
p-type
- doped with Tellurium (Te)
n-type

Applications

Gallium Antimonide is a crystal grown
gallium source used to produce sputtering
targets and deposition sources and as a
substrate material for various semiconductor
and photo-optic materials.
Thermally treated Gallium Antimonide
can be used as a surface-field THz emitter
with an efficiency comparable to Gallium Arsenide.
Gallium Antimonide applications
- infrared detectors
- infrared LEDs
- lasers
- transistors
- THz applications

Indium Phosphide (InP)

Grown by LEC
Diameter 2"
Orientation <100> or <111>
Available types and their parameters
- undoped
n-type
- doped with Sulfure (S) or with Tin (Sn)
n-type
- doped with Zinc (Zn)
p-type
- doped with Iron (Fe)
Semi-Insulating (SI)

Applications

Indium Phosphide (InP) is used to produce
efficient lasers, sensitive photodetectors
and modulators in the wavelength window typically used for telecommunications,
i.e., 1550 nm wavelengths, as it is a direct
bandgap III-V compound semiconductor material.
Indium Phosphide is used for THz generation along with Gallium Arsenide due to their high efficiency.
Indium Phosphide applications
- fabrication of laser diodes and LEDs
- heterojunction bipolar transistors
for optoelectric integration
- solar cells
- THz applications

Active materials for lasers

Active material example: Ytterbium-doped Calcium Aluminum Gadolinium Oxide (Yb: CaGdAlO₄, Yb: CALGO).
Yb: CALGO application: widely used in laser processing applications, e. g. femtosecond thin-disk oscillator in a femtosecond laser.
Yb: CALGO: highly effective laser medium for high power ultrafast lasers.
Dopant level can be controlled to optimize pumping requirements.

Scintillating materials

Scintillators – materials that exhibits scintillation, the property
of luminescence, when excited by ionizing radiation.
Scintillator example – Lutetium Aluminum Perovskite (LuAlO₃ , LuAP) doped with Cerium (Ce).
Ioninizing radiation sensors in the Positron Emission Tomography (PET).

Materials for optoelectronics

Oxide examples

rare earth garnets such as Yttrium Aluminum Garnet (Y₃Al₅O₁₂), Lutetium Aluminium Garnet (Lu₃Al₅O₁₂), Gadolinum Aluminium Galium Garnet (Gd₃Al₂Ga₃O₁₂)
peroskites such as Yttrium Orthoaluminate (YAlO₃) doped with neodymium (Nd) or other lanthanides, gadolinium-calcium oxide (GdCa₄O(BO₃)₃), and orthovanadate crystals (YVO₄)

Applications

Scintillators
active materials for lasers
Optical isolators
Passive Q-modulators of laser resonators
nonlinear optical materials
base materials
Substrates for various types of electronic structures

Gallium Phosphide (GaP)

Grown by LEC
Diameter 2"
Orientation <100> or <111> or <110>
Available types and their parameters
- undoped
Semi-Insulating (SI)
- undoped n-type
- doped with Sulfur (S)
n-type
- doped with Zinc (Zn)
p-type
- doped with Cadmium (Cd)
p-type
- doped with Chromium (Cr)
Semi-Insulating (SI)

Applications

Gallium Phosphide is used in manufacturing
low-cost red, orange, and green light-emitting
diodes (LEDs) with low to medium brightness.
Gallium Phosphide can be used in the optical switches. Optical switch is a key component in the nowadays optical network.
Gallium Phosphide applications:
- low-cost LEDs, red, orange, and green
light-emitting diodes
- THz applications, emitters and detectors
- optical switches

Indium Arsenide (InAs)

Grown by LEC
Diameter 2"
Orientation <100> or <111>
Available types and their parameters
- undoped
n-type
- doped with Sulfur (S)
n-type
- doped with Zinc (Zn)
p-type

Applications

Indium Arsenide is a direct bandgap material used for construction of infrared detectors,
for the wavelength range of 1–3.8 µm.
The detectors are usually photovoltaic photodiodes.
Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well.
Indium Arsenide applications:
- infrared detectors, photovoltaic photodiodes, cryogenically cooled, high-power
- diode lasers
- THz radiation source and quantum dots
- Faraday Rotators

Gallium Arsenide (GaAs)

Grown by Liquid Encapsulated Czochralski (LEC)
Diameter 2"
Orientation <100> or <111> or <110> or <310>
Available types and their parameters
- doped with Tellurium (Te), Tin (Sn), Silicon (Si)
n-type
- doped with Zinc (Zn)
p-type
- doped with Chromium (Cr)
Semi-Insulating (SI)
- undoped
Semi-Insulating (SI)

Applications

Gallium Arsenide is a semiconductor compound used in diodes, field-effect transistors (FETs), and integrated circuits (ICs).
Gallium Arsenide can be used as a surface-field THz emitter.
Gallium Arsenide applications
- microwave integrated circuits
- infrared light-emitting diodes
- laser diodes
- solar cells
- optical windows
- THz applications

Nonlinear Optical (NLO) Materials

NLO materials – allow us to change color of a light beam, its shape
in space and time, and to create the shortest events made by humans.
NLO materials example – Magnesium Aluminate Spinel doped with Cobalt (MgAl₂O₄: Co, MALO), Yttrium Aluminium Garnet doped with Vanadium (YAG: V3+), Chromium (YAG: Cr4+) or Cobalt (YAG: Co2+).
MALO, a non-linear absorber, used in microlasers with 10 kW impulse and rangefinder cameras up to several kilometers range.

Optical isolators

Terbium Scandium Aluminum Garnet (TSAG) crystal is a key isolator material for next generation fiber laser.
TSAG: magneto-optic crystal ideal for visible and infrared regions.
TSAG advantages: excellent thermal and mechanical properties, high Verdet constant.
Verdet constant: a measure of the strength of the Faraday effect
in a particular material, a large constant = strong Faraday effect,
material suitable for building an optical isolator.

Products & Services

We produce and develop variety of materials:

AIIIBV single crystals: GaAs, InAs, GaP, InP, GaSb
Other materials: SiC, Bi₂Te₃,Bi₂Se₃, BTS, BST
Oxides: Y₃Al₅O₁₂,Lu₃Al₅O₁₂,LuAP, Gd₃Al₂Ga₃O₁₂, YAlO₃,GdCa₄O(BO₃)₃,YVO₄, Yb: CALGO, TSAG, MALO, YAG: V3+, YAG: Cr4+, YAG: Co2+

We sell in different forms and shapes tailored to your needs:

polished epi-ready wafers
wafers diced into smaller parts
pieces of other shapes: i. e. oriented seeds
cubes and targets
polycrystalline boules

We share our knowledge with academic users

know-how on the synthesis crystal growth and Chemico-Mechanical Processing (CMP) of our materials.

Małgorzata Mroczkowska

Sales

We are ready to prepare tailor-made products according to your needs. Please contact us at malgorzata.mroczkowska@ensemble3.eu