Oxides

Bismuth Telluride (Bi2Te3), Bismuth Selenide (Bi2Se3), Bismuth Telluride Selenide (BTS), Bismuth Antimony Telluride (BST), doped or undoped

Applications

Automotive industry – heat energy recoveryin internal combustion engines
Radioisotope generators –- space industry
of electricity in space probes
Combined solar and thermogenerator systems, use of a wider –- green energy range of radiation frequencies

Silicon Carbide (SiC)

Silicon Carbide is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.
Gallium Nitride (GaN) – direct competitor, higher operating frequency, worse heat conduction, lower availability, so SiC is better for high-power energetics.

Applications

consumer electronics: PC power supplies, UPS, hybrid and electric vehicles
industry and energy: AC/DC and DC/AC converters, power transmission, rail vehicles, renewable energy systems, electric motor inverters

Gallium Antimonide (GaSb)

Grown by modified Czochralski method
Diameter 2"
Orientation <100> or <111>
Available types and their parameters
- undoped
p-type
- doped with Silicone (Si)
p-type
- doped with Zinc (Zn)
p-type
- doped with Tellurium (Te)
n-type

Applications

Gallium Antimonide is used as a substrate and source material for semiconductor and optoelectronic devices, and as an efficient surface-field THz emitter.

Key applications:

infrared detectors and LEDs
lasers
transistors
THz devices

Indium Phosphide (InP)

Grown by LEC
Diameter 2"
Orientation <100> or <111>
Available types and their parameters
- undoped
n-type
- doped with Sulfure (S) or with Tin (Sn)
n-type
- doped with Zinc (Zn)
p-type
- doped with Iron (Fe)
Semi-Insulating (SI)

Applications

Indium Phosphide is a direct-bandgap III–V semiconductor used in lasers, photodetectors and modulators for telecommunications (1550 nm). It is also applied in efficient THz generation.

Key applications:

laser diodes and LEDs
heterojunction bipolar transistors
solar cells
THz devices

Active materials for lasers

Active material example: Ytterbium-doped Calcium Aluminum Gadolinium Oxide (Yb: CaGdAlO₄, Yb: CALGO).
Yb: CALGO application: widely used in laser processing applications, e. g. femtosecond thin-disk oscillator in a femtosecond laser.
Yb: CALGO: highly effective laser medium for high power ultrafast lasers.
Dopant level can be controlled to optimize pumping requirements.

Scintillating materials

Scintillators – materials that exhibits scintillation, the propertyof luminescence, when excited by ionizing radiation.
Scintillator example – Lutetium Aluminum Perovskite (LuAlO3 , LuAP) doped with Cerium (Ce).
Ioninizing radiation sensors in the Positron Emission Tomography (PET).

Materials for optoelectronics

rare earth garnets such as Yttrium Aluminum Garnet (Y3Al5O12), Lutetium Aluminium Garnet (Lu3Al5O12), Gadolinum Aluminium Galium Garnet (Gd3Al2Ga3O12)
peroskites such as Yttrium Orthoaluminate (YAlO3) doped with neodymium (Nd) or other lanthanides, gadolinium-calcium oxide (GdCa4O(BO3)3), and orthovanadate crystals (YVO4)

Applications

Scintillators
active materials for lasers
Optical isolators
Passive Q-modulators of laser resonators
nonlinear optical materials
base materials
Substrates for various types of electronic structures

Gallium Phosphide (GaP)

Grown by LEC
Diameter 2"
Orientation <100> or <111> or <110>
Available types and their parameters
- undoped
Semi-Insulating (SI)
- undoped n-type
- doped with Sulfur (S)
n-type
- doped with Zinc (Zn)
p-type
- doped with Cadmium (Cd)
p-type
- doped with Chromium (Cr)
Semi-Insulating (SI)

Applications

Gallium Phosphide is used mainly in low-cost red, orange and green LEDs, as well as in optical switches for modern optical networks.

Key applications:

LEDs (red, orange, green)
THz emitters and detectors
optical switches

Indium Arsenide (InAs)

Grown by LEC
Diameter 2"
Orientation <100> or <111>
Available types and their parameters
- undoped
n-type
- doped with Sulfur (S)
n-type
- doped with Zinc (Zn)
p-type

Applications

Indium Arsenide is used in infrared detection (1–3.8 µm), operating as photovoltaic photodiodes in both cryogenic and room-temperature high-power systems.

Key applications:

infrared detectors
diode lasers
THz sources and quantum dots
Faraday rotators

Gallium Arsenide (GaAs)

Grown by Liquid Encapsulated Czochralski (LEC)
Diameter 2"
Orientation <100> or <111> or <110> or <310>
Available types and their parameters
- doped with Tellurium (Te), Tin (Sn), Silicon (Si)
n-type
- doped with Zinc (Zn)
p-type
- doped with Chromium (Cr)
Semi-Insulating (SI)
- undoped
Semi-Insulating (SI)

Applications

Gallium Arsenide is used in high-frequency electronics and optoelectronics.

Key applications:

microwave ICs
infrared LEDs
laser diodes
solar cells
optical windows
THz devices

Nonlinear Optical (NLO) Materials

NLO materials – allow us to change color of a light beam, its shape
in space and time, and to create the shortest events made by humans.
NLO materials example – Magnesium Aluminate Spinel doped with Cobalt (MgAl₂O₄: Co, MALO), Yttrium Aluminium Garnet doped with Vanadium (YAG: V3+), Chromium (YAG: Cr4+) or Cobalt (YAG: Co2+).
MALO, a non-linear absorber, used in microlasers with 10 kW impulse and rangefinder cameras up to several kilometers range.

Optical isolators

Terbium Scandium Aluminum Garnet (TSAG) crystal is a key isolator material for next generation fiber laser.
TSAG: magneto-optic crystal ideal for visible and infrared regions.
TSAG advantages: excellent thermal and mechanical properties, high Verdet constant.
Verdet constant: a measure of the strength of the Faraday effect
in a particular material, a large constant = strong Faraday effect,
material suitable for building an optical isolator.

Products & Services

We produce and develop variety of materials:

AIIIBV single crystals: GaAs, InAs, GaP, InP, GaSb
Other materials: SiC, Bi₂Te₃,Bi₂Se₃, BTS, BST
Oxides: Y₃Al₅O₁₂,Lu₃Al₅O₁₂,LuAP, Gd₃Al₂Ga₃O₁₂, YAlO₃,GdCa₄O(BO₃)₃,YVO₄, Yb: CALGO, TSAG, MALO, YAG: V3+, YAG: Cr4+, YAG: Co2+

We sell in different forms and shapes tailored to your needs:

polished epi-ready wafers
wafers diced into smaller parts
pieces of other shapes: i. e. oriented seeds
cubes and targets
polycrystalline boules

We share our knowledge with academic users

know-how on the synthesis crystal growth and Chemico-Mechanical Processing (CMP) of our materials.

Małgorzata Mroczkowska

Sales

We are ready to prepare tailor-made products according to your needs. Please contact us at malgorzata.mroczkowska@ensemble3.eu