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Functional Materials Technology Group
Optical Nanocharacterization Group
Inverse Materials Design Group
Next-Generation Energy Systems Group
Biophotonic Applications Group
Solar Energy Conversion Group
Oxide Single Crystals Group
A3B5 Compound Semiconductors Group
Functional Materials Laboratory
Oxide Single Crystals Laboratory
Materials Characterization Laboratory
III-V Compound Semiconductors Laboratory
Ensemble3 sp. z o.o.
01-919 Warsaw
133 Wólczyńska St.
NIP 1182211096
KRS 0000858669
These measurements employ an in-house built photoluminescence system with double grating monochromator HR 460 and lock-in technique. The signal is collected using different photomultipliers and PbS or InGaAs detectors in the spectral range 300nm-3000nm. The setup is equipped with a close-cycle cooling system working down to 4.2K but during laser illumination the lowest available temperature is 10K. Precise calibration of the sample temperature is done by measurements of the full width at half maximum of the free exciton line in silicon. The emission can be excited by monochromatic lines of Argon laser (514.5nm, 488nm, 478nm, 543nm), He-Cd laser (325nm) or the laser diodes (405 and 980nm).