These are Mark IV pullers for crystallization of AIIIBV group semiconducting compounds such as phosphides, antimonides or arsenides (i.e. GaP, InP, GaSb, GaAs, InAs), using the Liquid-encapsulated Czochralski (LEC) method. High-pressure LEC pullers (up to 100 bar) allow growth of crystals up to 4” in diameter and about 30 cm in length. The furnace has a resistive heating system with temperatures up to 1800˚C applying a multi-heater system consisting of three graphite heaters. All the crystallization processes are controlled by a diameter control system. Quartz or pBN (pyrolytic boron nitride) crucibles from 4” to 8” in diameter can be used. In the device, the integrated process of in-situ synthesis and crystallization can be performed for GaAs or InAs materials.
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Functional Materials Technology Group
Optical Nanocharacterization Group
Inverse Materials Design Group
Next-Generation Energy Systems Group
Biophotonic Applications Group
Solar Energy Conversion Group
Oxide Single Crystals Group