These are Mark IV pullers for crystallization of AIIIBV group semiconducting compounds such as phosphides, antimonides or arsenides (i.e. GaP, InP, GaSb, GaAs, InAs), using the Liquid-encapsulated Czochralski (LEC) method. High-pressure LEC pullers (up to 100 bar) allow growth of crystals up to 4” in diameter and about 30 cm in length. The furnace has a resistive heating system with temperatures up to 1800˚C applying a multi-heater system consisting of three graphite heaters. All the crystallization processes are controlled by a diameter control system. Quartz or pBN (pyrolytic boron nitride) crucibles from 4” to 8” in diameter can be used. In the device, the integrated process of in-situ synthesis and crystallization can be performed for GaAs or InAs materials. 


27 August 2022

Liquid-encapsulated Czochralski (LEC) Growth System

  1. pl
  2. en

01-919  Warsaw
133 Wólczyńska St. 


You have subscribed to our newsletter!
  • Please fill out all required fields!


Subscribe to our newsletter