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Propagation Characteristics of Single and Multilayer Ga:ZnO in the Epsilon Near Zero Region

28 March 2023

๐Ÿ“ฃ Another publication โœ from CoE ENSEMBLE3 has just been released! The article, titled "Propagation Characteristics of Single and Multilayer Ga:ZnO in the Epsilon Near Zero Region" by ๐Ÿ‘‰๐Ÿป Ranjeet Dwivedi from the Ensemble3 Team is available here ๐Ÿ‘‰๐Ÿป ๐Ÿ‘‰๐Ÿป ๐Ÿ‘‰๐Ÿป ๐Ÿ”— https://doi.org/10.1364/OE.484026

 

In this study, researchers explored the propagation characteristics of Ga:ZnO (GZO) thin films that were embedded in a ZnWO4 background in the epsilon near zero (ENZ) region. They found that this structure supported a new non-radiating mode, which had a dispersion curve that lay to the left of the light line in the background region. The calculated electromagnetic fields displayed a non-radiating nature, which was in contrast to the Berreman mode.

 

The researchers also discovered that exciting these modes using end-fire coupling in a multilayer structure comprising an array of GZO layers enabled strong polarization selective and resonant absorption/emission, which could be adjusted in terms of spectral location and bandwidth.Furthermore, by integrating an antireflection coating at the facets of the layered structure, near-perfect absorption was achievable, and the characteristics of this absorption could be fine-tuned through variations in the geometrical parameters.

 

Overall, this study's findings have significant implications for optoelectronic devices and sensors that rely on light absorption/emission.