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Functional Materials Technology Group
Optical Nanocharacterization Group
Inverse Materials Design Group
Next-Generation Energy Systems Group
Biophotonic Applications Group
Solar Energy Conversion Group
Oxide Single Crystals Group
A3B5 Compound Semiconductors Group
Functional Materials Laboratory
Oxide Single Crystals Laboratory
Materials Characterization Laboratory
III-V Compound Semiconductors Laboratory
Ensemble3 sp. z o.o.
01-919 Warsaw
133 Wรณlczyลska St.
NIP 1182211096
KRS 0000858669
๐ฃ Another publication โ from CoE ENSEMBLE3 has just been released! The article, titled "Propagation Characteristics of Single and Multilayer Ga:ZnO in the Epsilon Near Zero Region" by ๐๐ป Ranjeet Dwivedi from the Ensemble3 Team is available here ๐๐ป ๐๐ป ๐๐ป ๐ https://doi.org/10.1364/OE.484026
In this study, researchers explored the propagation characteristics of Ga:ZnO (GZO) thin films that were embedded in a ZnWO4 background in the epsilon near zero (ENZ) region. They found that this structure supported a new non-radiating mode, which had a dispersion curve that lay to the left of the light line in the background region. The calculated electromagnetic fields displayed a non-radiating nature, which was in contrast to the Berreman mode.
The researchers also discovered that exciting these modes using end-fire coupling in a multilayer structure comprising an array of GZO layers enabled strong polarization selective and resonant absorption/emission, which could be adjusted in terms of spectral location and bandwidth.Furthermore, by integrating an antireflection coating at the facets of the layered structure, near-perfect absorption was achievable, and the characteristics of this absorption could be fine-tuned through variations in the geometrical parameters.
Overall, this study's findings have significant implications for optoelectronic devices and sensors that rely on light absorption/emission.